IXTT11P50
IXYS
IXYS
MOSFET P-CH 500V 11A TO268
$12.12
Available to order
Reference Price (USD)
30+
$7.72867
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTT11P50 by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTT11P50 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
onsemi
NTD20N03L27-001
Vishay Siliconix
IRF540STRRPBF
Vishay Siliconix
SIRA64DP-T1-RE3
onsemi
NVMYS7D3N04CLTWG
STMicroelectronics
STD15N60M2-EP
onsemi
FDH047AN08A0
Diodes Incorporated
DMT10H009LSS-13
Nexperia USA Inc.
PMN40ENEX
Toshiba Semiconductor and Storage
TK7A65W,S5X
Nexperia USA Inc.