IXTY01N100D
IXYS
IXYS
MOSFET N-CH 1000V 100MA TO252
$3.24
Available to order
Reference Price (USD)
1+
$2.48000
70+
$2.00000
140+
$1.80000
560+
$1.40000
1,050+
$1.16000
2,520+
$1.12000
Exquisite packaging
Discount
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Boost your electronic applications with IXTY01N100D, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXTY01N100D meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 110Ohm @ 50mA, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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