IXXX200N65B4
IXYS
IXYS
IGBT 650V 370A 1150W PLUS247
$21.87
Available to order
Reference Price (USD)
1+
$18.55000
10+
$16.86300
30+
$15.59833
120+
$14.33358
270+
$13.06881
510+
$12.22567
Exquisite packaging
Discount
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Discover high-performance IXXX200N65B4 Single IGBTs from IXYS, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, IXXX200N65B4 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 370 A
- Current - Collector Pulsed (Icm): 1000 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
- Power - Max: 1150 W
- Switching Energy: 4.4mJ (on), 2.2mJ (off)
- Input Type: Standard
- Gate Charge: 553 nC
- Td (on/off) @ 25°C: 62ns/245ns
- Test Condition: 400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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