RJP60F4DPM-00#T1
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 60A 41.2W TO-3PFM
$5.79
Available to order
Reference Price (USD)
1+
$6.06000
10+
$5.41000
25+
$4.86920
Exquisite packaging
Discount
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Enhance your electronic designs with RJP60F4DPM-00#T1 Single IGBTs from Renesas Electronics America Inc, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Renesas Electronics America Inc's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
- Power - Max: 41.2 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 45ns/70ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3PFM
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