LND150N8-G
Microchip Technology
Microchip Technology
MOSFET N-CH 500V 30MA SOT89-3
$0.83
Available to order
Reference Price (USD)
2,000+
$0.46351
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with LND150N8-G, a premium Transistors - FETs, MOSFETs - Single from Microchip Technology. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust LND150N8-G for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89-3
- Package / Case: TO-243AA
Related Products
Toshiba Semiconductor and Storage
SSM3J15F,LF
Infineon Technologies
BSC009NE2LS5IATMA1
Toshiba Semiconductor and Storage
TK49N65W,S1F
onsemi
FDMF6704A
Vishay Siliconix
IRFI830GPBF
Vishay Siliconix
SIHA22N60AE-E3
Vishay Siliconix
SQA401CEJW-T1_GE3
Infineon Technologies
IRFR120NTRPBF
STMicroelectronics
STP35N60DM2
onsemi