TK49N65W,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR TO2
$11.99
Available to order
Reference Price (USD)
1+
$11.99000
500+
$11.8701
1000+
$11.7502
1500+
$11.6303
2000+
$11.5104
2500+
$11.3905
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TK49N65W,S1F by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TK49N65W,S1F inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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