MDI75-12A3
IXYS
IXYS
IGBT MODULE 1200V 90A 370W Y4M5
$60.26
Available to order
Reference Price (USD)
6+
$49.69167
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS's MDI75-12A3 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust IXYS for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 90 A
- Power - Max: 370 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M5
- Supplier Device Package: Y4-M5
Related Products
IXYS
MWI50-12T7T
IXYS
MII100-12A3
IXYS
MIXA150Q1200VA
Infineon Technologies
FZ400R17KE3S4HOSA1
Microchip Technology
APTGTQ100SK65T1G
Infineon Technologies
BSM75GAR120DN2HOSA1
Microchip Technology
APTGT300DH60G
Infineon Technologies
FF800R17KF6CB2NOSA2
onsemi
NXH200B100H4F2SG
Infineon Technologies