MMBF4393LT1G
onsemi
onsemi
JFET N-CH 30V 0.225W SOT23-3
$0.42
Available to order
Reference Price (USD)
3,000+
$0.11075
6,000+
$0.10486
15,000+
$0.09603
30,000+
$0.09015
75,000+
$0.08132
Exquisite packaging
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For designers requiring robust EMC performance, onsemi's MMBF4393LT1G JFET transistors incorporate advanced shielding against RF interference without compromising transconductance. The patented guard ring design reduces substrate noise coupling by 18dB compared to conventional models. Ideal for spectrum analyzers and base station equipment where signal purity is paramount. Register for our engineer portal to access SPICE models and evaluation board schematics featuring these innovative components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
- Resistance - RDS(On): 100 Ohms
- Power - Max: 225 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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