MMBFJ108
onsemi
onsemi
JFET N-CH 25V 350MW SSOT3
$0.64
Available to order
Reference Price (USD)
3,000+
$0.18840
6,000+
$0.17625
15,000+
$0.16409
30,000+
$0.15558
Exquisite packaging
Discount
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For designers requiring robust EMC performance, onsemi's MMBFJ108 JFET transistors incorporate advanced shielding against RF interference without compromising transconductance. The patented guard ring design reduces substrate noise coupling by 18dB compared to conventional models. Ideal for spectrum analyzers and base station equipment where signal purity is paramount. Register for our engineer portal to access SPICE models and evaluation board schematics featuring these innovative components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 8 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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