MMBFJ112
onsemi
onsemi
JFET N-CH 35V 0.35W SOT-23
$0.42
Available to order
Reference Price (USD)
3,000+
$0.12006
6,000+
$0.11368
15,000+
$0.10411
30,000+
$0.09773
75,000+
$0.08816
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers requiring robust EMC performance, onsemi's MMBFJ112 JFET transistors incorporate advanced shielding against RF interference without compromising transconductance. The patented guard ring design reduces substrate noise coupling by 18dB compared to conventional models. Ideal for spectrum analyzers and base station equipment where signal purity is paramount. Register for our engineer portal to access SPICE models and evaluation board schematics featuring these innovative components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
onsemi
MCH5908H-TL-E
Linear Integrated Systems, Inc.
LSK170D TO-92 3L
Linear Integrated Systems, Inc.
SST4118 SOT-23 3L
onsemi
2SK715W-AC
UnitedSiC
UJ3N120035K3S
NXP USA Inc.
PMBFJ112,215
Linear Integrated Systems, Inc.
LS830 TO-71 6L
Linear Integrated Systems, Inc.
LS846 SOT-23 3L
Linear Integrated Systems, Inc.
LS844 TO-78 6L
NTE Electronics, Inc