MMBT6427LT1G
onsemi
onsemi
TRANS NPN DARL 40V 0.5A SOT23-3
$0.21
Available to order
Reference Price (USD)
3,000+
$0.04108
6,000+
$0.03592
15,000+
$0.03075
30,000+
$0.02903
75,000+
$0.02731
150,000+
$0.02444
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose MMBT6427LT1G by onsemi for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, MMBT6427LT1G is a versatile solution. Ready to order? Submit your inquiry today and let onsemi provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 225 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
onsemi
MJD122RLG
Microchip Technology
JANTXV2N5302
NTE Electronics, Inc
NTE2682
Central Semiconductor Corp
CMPT5401 TR PBFREE
Nexperia USA Inc.
BSR30,115
Microchip Technology
JANSR2N2907A
Rohm Semiconductor
MMST8098T146
Rohm Semiconductor
2SC5824T100R
NTE Electronics, Inc
NTE2684
Nexperia USA Inc.