BST39,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 350V 0.1A SOT89
$0.56
Available to order
Reference Price (USD)
1,000+
$0.21450
2,000+
$0.19800
5,000+
$0.18700
10,000+
$0.18150
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose BST39,115 by Nexperia USA Inc. for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BST39,115 is a versatile solution. Ready to order? Submit your inquiry today and let Nexperia USA Inc. provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Power - Max: 1.3 W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
Related Products
onsemi
SBC807-40LT3G
onsemi
SBC846BWT1G
Microchip Technology
JANTX2N2605
Microchip Technology
JAN2N4029
Diodes Incorporated
FCX1047ATA
onsemi
MMBTA64LT3G
Diotec Semiconductor
BC856C
NXP USA Inc.
BLA6G1011LS-200RG11
Microchip Technology
JANTX2N6338
NXP USA Inc.