MMBTA14LT1HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 30V 0.3A SOT23
$0.14
Available to order
Reference Price (USD)
18,000+
$0.08154
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with MMBTA14LT1HTSA1 by Infineon Technologies, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, MMBTA14LT1HTSA1 is the perfect fit. Contact us today to learn more and place your order with Infineon Technologies.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 330 mW
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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