MMDT2227Q-7-F
Diodes Incorporated
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT36
$0.09
Available to order
Reference Price (USD)
3,000+
$0.09200
Exquisite packaging
Discount
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Discover high-performance MMDT2227Q-7-F Bipolar Junction Transistor Arrays from Diodes Incorporated, designed for reliable and efficient circuit applications. These transistor arrays feature excellent current handling, low saturation voltage, and high-speed switching capabilities, making them ideal for amplification and switching tasks. Perfect for use in industrial automation, consumer electronics, and communication devices. Contact us today for a quote and let our experts assist you with your specific requirements!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP Complementary
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V, 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA, 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 300MHz, 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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