MMDT5451Q-7
Diodes Incorporated
Diodes Incorporated
SS HI VOLTAGE TRANSISTOR SOT363
$0.10
Available to order
Reference Price (USD)
1+
$0.09521
500+
$0.0942579
1000+
$0.0933058
1500+
$0.0923537
2000+
$0.0914016
2500+
$0.0904495
Exquisite packaging
Discount
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The MMDT5451Q-7 Bipolar Junction Transistor Arrays from Diodes Incorporated are built for high-efficiency and long-lasting operation. Key benefits include matched transistor pairs, low distortion, and wide operating temperature range, ideal for RF and power amplification. Commonly found in broadcasting equipment, instrumentation, and security systems. Interested in learning more? Submit an inquiry and our experts will guide you through the selection process!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 160V, 150V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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