MMIX1X200N60B3H1
IXYS
IXYS
IGBT 600V 175A 520W SMPD
$45.79
Available to order
Reference Price (USD)
1+
$38.07000
20+
$35.21750
40+
$32.36200
100+
$30.07770
260+
$27.60292
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMIX1X200N60B3H1 Single IGBT by IXYS sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with IXYS for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 175 A
- Current - Collector Pulsed (Icm): 1000 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
- Power - Max: 520 W
- Switching Energy: 2.85mJ (on), 2.9mJ (off)
- Input Type: Standard
- Gate Charge: 315 nC
- Td (on/off) @ 25°C: 48ns/160ns
- Test Condition: 360V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-PowerSMD, 21 Leads
- Supplier Device Package: 24-SMPD
Related Products
IXYS
IXGK50N120C3H1
Microchip Technology
APT20GF120BRDG
IXYS
IXYN110N120A4
IXYS
IXGP48N60A3
IXYS
IXYR50N120C3D1
Infineon Technologies
IGB30N60TATMA1
IXYS
IXA55I1200HJ
IXYS
IXYH10N170C
onsemi
FGY75T95SQDT
IXYS