MRF24G300HSR5
NXP USA Inc.
NXP USA Inc.
RF FET GAN 330W 50V 2500MHZ
$182.52
Available to order
Reference Price (USD)
1+
$182.52000
500+
$180.6948
1000+
$178.8696
1500+
$177.0444
2000+
$175.2192
2500+
$173.394
Exquisite packaging
Discount
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Discover high-performance MRF24G300HSR5 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Active
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 2.4GHz ~ 2.5GHz
- Gain: 15.3dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: 300W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
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