BLW96/01,112
Ampleon USA Inc.
Ampleon USA Inc.
RF TRANS NPN 55V 235MHZ CRFM4
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Upgrade your RF designs with Ampleon USA Inc.'s BLW96/01,112 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how BLW96/01,112 can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 235MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 340W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V
- Current - Collector (Ic) (Max): 12A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-121B
- Supplier Device Package: CRFM4
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