MRF581G
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 18V 5GHZ MICRO X
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with Microsemi Corporation's MRF581G Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MRF581G can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Micro-X ceramic (84C)
- Supplier Device Package: Micro-X ceramic (84C)
Related Products
Infineon Technologies
BFP183
onsemi
KSC2757YMTF
NXP USA Inc.
BFG520W,115
CEL
2SC5455-A
Microsemi Corporation
JAN2N4957
Microsemi Corporation
MRF5812GR1
Broadcom Limited
AT-32033-BLKG
CEL
NE461M02-AZ
Infineon Technologies
BFP 640 H6433
Diodes Incorporated