MRF8372R1
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 16V 870MHZ 8SO
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Upgrade your RF designs with Microsemi Corporation's MRF8372R1 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MRF8372R1 can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: 870MHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB ~ 9.5dB
- Power - Max: 2.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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