MS1004
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 55V 30MHZ M177
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Maximize signal clarity with MS1004 RF BJT transistors by Microsemi Corporation. Featuring low distortion and high linearity, these components are perfect for high-sensitivity applications like medical imaging equipment and military communications. Their compact design allows for easy integration without compromising performance. Don t miss out inquire now for bulk discounts and technical specifications!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: 14.5dB
- Power - Max: 330W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
- Current - Collector (Ic) (Max): 40A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M177
- Supplier Device Package: M177
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