MS1051
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 18V 30MHZ M174
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microsemi Corporation's MS1051 RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: 11dB ~ 13dB
- Power - Max: 290W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M174
- Supplier Device Package: M174
Related Products
Microsemi Corporation
MS1227
Central Semiconductor Corp
CP616-2N5160-CM
Microsemi Corporation
MS2206
Microsemi Corporation
64077
Microsemi Corporation
MS1406
Microsemi Corporation
MDS60L
CEL
NE85634-T1-RF-A
Microsemi Corporation
UTV8100B
Microsemi Corporation
62091
Microsemi Corporation