MS1406
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 35V 175MHZ M135
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve peak RF performance with MS1406 transistors by Microsemi Corporation. These BJT components combine high breakdown voltage with superior thermal management, catering to power amplifier stages and frequency multipliers. Trusted in defense and commercial sectors alike. Take the next step inquire about customization options and lead times!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 35V
- Frequency - Transition: 175MHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.2dB
- Power - Max: 30W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
- Current - Collector (Ic) (Max): 3A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: M135
- Supplier Device Package: M135
Related Products
Microsemi Corporation
MDS60L
CEL
NE85634-T1-RF-A
Microsemi Corporation
UTV8100B
Microsemi Corporation
62091
Microsemi Corporation
MS1015E
Microsemi Corporation
A4815H
MACOM Technology Solutions
PH8931
Broadcom Limited
AT-41486-TR2G
Microsemi Corporation
MS2215
Microsemi Corporation