MSCGLQ50DU120CTBL1NG
Microchip Technology
Microchip Technology
PM-IGBT-SBD-BL1
$126.78
Available to order
Reference Price (USD)
1+
$126.78000
500+
$125.5122
1000+
$124.2444
1500+
$122.9766
2000+
$121.7088
2500+
$120.441
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microchip Technology's MSCGLQ50DU120CTBL1NG IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 375 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 25 µA
- Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Related Products
onsemi
NXH50C120L2C2ES1G
Infineon Technologies
FS35R12KE3GBPSA1
Infineon Technologies
FF300R12ME4PBOSA1
IXYS
MIXA450PF1200TSF
Infineon Technologies
FZ3600R17KE3
Infineon Technologies
FP15R12KE3GBPSA1
Microchip Technology
APTGT225DU170G
Infineon Technologies
FZ500R65KE3C1NPSA1
Infineon Technologies
FS50R17KE3B17BPSA1
Infineon Technologies