MSCSM120DHM31CTBL2NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL2
$195.93
Available to order
Reference Price (USD)
1+
$195.93000
500+
$193.9707
1000+
$192.0114
1500+
$190.0521
2000+
$188.0928
2500+
$186.1335
Exquisite packaging
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Boost your project s performance with Microchip Technology s MSCSM120DHM31CTBL2NG, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, MSCSM120DHM31CTBL2NG provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of MSCSM120DHM31CTBL2NG.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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