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MSCSM120TAM11CTPAG

Microchip Technology
MSCSM120TAM11CTPAG Preview
Microchip Technology
PM-MOSFET-SIC-SBD~-SP6P
$1,138.84
Available to order
Reference Price (USD)
1+
$1138.84000
500+
$1127.4516
1000+
$1116.0632
1500+
$1104.6748
2000+
$1093.2864
2500+
$1081.898
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
  • Power - Max: 1.042kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6-P

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