MX0912B351Y
Ampleon USA Inc.
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
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Maximize signal clarity with MX0912B351Y RF BJT transistors by Ampleon USA Inc.. Featuring low distortion and high linearity, these components are perfect for high-sensitivity applications like medical imaging equipment and military communications. Their compact design allows for easy integration without compromising performance. Don t miss out inquire now for bulk discounts and technical specifications!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 960W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 21A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-439A
- Supplier Device Package: CDFM2
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