MZ0912B50Y
Ampleon USA Inc.
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
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Ampleon USA Inc.'s MZ0912B50Y RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 150W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 3A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-443A
- Supplier Device Package: SOT443A
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