N0412N-S19-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 100A TO220
$1.90
Available to order
Reference Price (USD)
1,950+
$0.74820
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of N0412N-S19-AY, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, N0412N-S19-AY is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
IXYS
IXTH80N075L2
Microchip Technology
APT10035JFLL
Infineon Technologies
IMZA65R027M1HXKSA1
Taiwan Semiconductor Corporation
BSS138 RFG
Infineon Technologies
IRF5803TRPBF
STMicroelectronics
STW31N65M5
IXYS
IXTN102N65X2
Infineon Technologies
IRF1010ESTRLPBF
Taiwan Semiconductor Corporation
TSM150P03PQ33 RGG
Infineon Technologies