Shopping cart

Subtotal: $0.00

STW31N65M5

STMicroelectronics
STW31N65M5 Preview
STMicroelectronics
MOSFET N-CH 650V 22A TO247
$5.36
Available to order
Reference Price (USD)
600+
$4.38355
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

Related Products

Infineon Technologies

IRF1010ESTRLPBF

Taiwan Semiconductor Corporation

TSM150P03PQ33 RGG

Infineon Technologies

IPT60R055CFD7XTMA1

Rectron USA

RM4N650TI

Rohm Semiconductor

R6015ENX

Vishay Siliconix

SIR401DP-T1-GE3

Infineon Technologies

IPD65R600C6BTMA1

Microchip Technology

APT26M100JCU3

Top