NE85639R-T1-A
CEL
CEL
RF TRANS NPN 12V 9GHZ SOT143R
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Designed for the future, CEL's NE85639R-T1-A RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
- Gain: 13.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-143R
- Supplier Device Package: SOT-143R
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