NESG2031M05-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
NESG2031 - NPN SIGE RF TRANSISTO
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
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Designed for the future, Renesas Electronics America Inc's NESG2031M05-T1-A RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
- Gain: 10dB ~ 17dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M05