NESG2101M05-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
NESG2101 - NPN SIGE RF TRANSISTO
$0.50
Available to order
Reference Price (USD)
1+
$0.50000
500+
$0.495
1000+
$0.49
1500+
$0.485
2000+
$0.48
2500+
$0.475
Exquisite packaging
Discount
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Renesas Electronics America Inc's NESG2101M05-T1-A RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 17GHz
- Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
- Gain: 11dB ~ 19dB
- Power - Max: 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M05
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