NGB8207BNT4G
onsemi
onsemi
INSULATED GATE BIPOLAR TRANSISTO
$0.62
Available to order
Reference Price (USD)
800+
$0.81625
1,600+
$0.73758
2,400+
$0.68840
5,600+
$0.65562
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NGB8207BNT4G Single IGBT from onsemi redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. onsemi stands behind every NGB8207BNT4G with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 365 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 4V, 20A
- Power - Max: 165 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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