NGD8205ANT4G
onsemi
onsemi
INSULATED GATE BIPOLAR TRANSISTO
$0.74
Available to order
Reference Price (USD)
2,500+
$0.77962
5,000+
$0.77000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NGD8205ANT4G Single IGBT by onsemi sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with onsemi for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 390 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
- Power - Max: 125 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -/5µs
- Test Condition: 300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
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