NGTB35N65FL2WG
onsemi
onsemi
IGBT TRENCH/FS 650V 70A TO247
$4.99
Available to order
Reference Price (USD)
1+
$3.12000
30+
$2.64600
120+
$2.29317
510+
$1.95216
1,020+
$1.64640
Exquisite packaging
Discount
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Optimize power control with NGTB35N65FL2WG Single IGBTs from onsemi, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. onsemi ensures NGTB35N65FL2WG meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Power - Max: 300 W
- Switching Energy: 840µJ (on), 280µJ (off)
- Input Type: Standard
- Gate Charge: 125 nC
- Td (on/off) @ 25°C: 72ns/132ns
- Test Condition: 400V, 35A, 10Ohm, 15V
- Reverse Recovery Time (trr): 68 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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