NGTB40N60L2WG
onsemi
onsemi
IGBT TRENCH/FS 600V 80A TO247
$6.02
Available to order
Reference Price (USD)
1+
$6.32000
30+
$5.36300
120+
$4.64783
510+
$3.95661
1,020+
$3.33690
Exquisite packaging
Discount
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Discover high-performance NGTB40N60L2WG Single IGBTs from onsemi, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, NGTB40N60L2WG ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A
- Power - Max: 417 W
- Switching Energy: 1.17mJ (on), 280µJ (off)
- Input Type: Standard
- Gate Charge: 228 nC
- Td (on/off) @ 25°C: 98ns/213ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 73 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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