IKD06N65ET6ARMA1
Infineon Technologies
Infineon Technologies
IKD06N65ET6ARMA1
$1.39
Available to order
Reference Price (USD)
1+
$1.39000
500+
$1.3761
1000+
$1.3622
1500+
$1.3483
2000+
$1.3344
2500+
$1.3205
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IKD06N65ET6ARMA1 Single IGBT by Infineon Technologies is a game-changer for energy-efficient systems. Ideal for HVAC, robotics, and power distribution, it boasts fast turn-off times and low gate drive requirements. Its advanced technology reduces energy waste and improves system longevity. Trust Infineon Technologies for premium-quality transistors backed by exceptional support. Request a sample or quote now to start your next innovation!
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 9 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
- Power - Max: 31 W
- Switching Energy: 60µJ (on), 30µJ (off)
- Input Type: Standard
- Gate Charge: 13.7 nC
- Td (on/off) @ 25°C: 15ns/35ns
- Test Condition: 400V, 3A, 47Ohm, 15V
- Reverse Recovery Time (trr): 30 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
Related Products
Infineon Technologies
IKP30N65H5XKSA1
onsemi
MGB20N36CL
Rohm Semiconductor
RGT8TM65DGC9
IXYS
IXYA20N120C3HV
IXYS
IXXH75N60B3D1
onsemi
NGTB40N65FL2WG
Infineon Technologies
AIGW40N65F5XKSA1
IXYS
IXGA12N120A3
STMicroelectronics
STGYA75H120DF2
Microchip Technology