NGTG40N120FL2WG
onsemi
onsemi
IGBT 1200V 40A TO-247
$5.14
Available to order
Reference Price (USD)
1+
$8.25000
30+
$7.10333
120+
$6.16767
510+
$5.37075
1,020+
$4.67775
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with NGTG40N120FL2WG Single IGBTs from onsemi, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. onsemi ensures NGTG40N120FL2WG meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 535 W
- Switching Energy: 3.4mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 313 nC
- Td (on/off) @ 25°C: 116ns/286ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
Microchip Technology
APT15GT120BRDQ1G
onsemi
NGB15N41CLT4G
IXYS
IXXH40N65B4D1
Alpha & Omega Semiconductor Inc.
AOB5B60D
onsemi
NGTB30N60IHLWG
STMicroelectronics
STGWA30IH65DF
Rohm Semiconductor
RGCL80TK60DGC11
IXYS
IXXH75N60C3D1
onsemi
FGY75T95LQDT
STMicroelectronics