NHUMD10F
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
$0.05
Available to order
Reference Price (USD)
1+
$0.05172
500+
$0.0512028
1000+
$0.0506856
1500+
$0.0501684
2000+
$0.0496512
2500+
$0.049134
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Select Nexperia USA Inc.'s NHUMD10F for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, Nexperia USA Inc. offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your NHUMD10F inquiry our team awaits your requirements!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 170MHz, 150MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Infineon Technologies
BCR10PNH6730XTMA1
onsemi
NSVBC114EDXV6T1G
Diodes Incorporated
ADA114YUQ-13
Toshiba Semiconductor and Storage
RN1968(TE85L,F)
Rohm Semiconductor
QSH29TR
Micro Commercial Co
UMH2N-TP
Toshiba Semiconductor and Storage
RN2907FE,LF(CT
Nexperia USA Inc.
PUMH4,115
Nexperia USA Inc.
PQMD13Z
Toshiba Semiconductor and Storage