NHUMH11F
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 80V 6TSSOP
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with Nexperia USA Inc.'s NHUMH11F Pre-Biased BJT Arrays the perfect solution for space-constrained applications. These discrete semiconductor products deliver optimized performance with built-in bias resistors, simplifying your PCB layout while ensuring stable operation. Key features include high current gain, low leakage current, and excellent temperature characteristics. Widely used in LED drivers, interface circuits, and logic level conversion across telecom, automation, and IoT devices. Trust Nexperia USA Inc.'s expertise in transistor technology for your next project. Ready to order or need technical support? Send us your inquiry today!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 170MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Nexperia USA Inc.
PQMD16Z
Diodes Incorporated
DDC114YUQ-13-F
onsemi
NSVMUN5336DW1T1G
Toshiba Semiconductor and Storage
RN4983FE,LXHF(CT
onsemi
NSBA143TDXV6T5G
onsemi
MUN5331DW1T1G
Panasonic Electronic Components
UP0431100L
Toshiba Semiconductor and Storage
RN2502(TE85L,F)
Rohm Semiconductor
EMD9T2R
Nexperia USA Inc.