NHUMH13X
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 80V 6TSSOP
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade to Nexperia USA Inc.'s premium NHUMH13X BJT Arrays for unmatched performance in discrete semiconductor applications. These pre-biased transistor pairs deliver consistent results in amplification and switching tasks, featuring optimized base-emitter resistors for immediate circuit integration. Perfect for use in voltage regulators, relay drivers, and signal conditioning circuits within consumer electronics and embedded systems. The product line boasts high power dissipation, wide operating temperature ranges, and moisture-resistant packaging. As an industry leader, Nexperia USA Inc. provides technical documentation and design support for all NHUMH13X applications. Start your order process submit an inquiry to receive customized solutions!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 170MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Toshiba Semiconductor and Storage
RN4911,LXHF(CT
Diodes Incorporated
UMC4N-7
onsemi
MUN5232DW1T1G
Nexperia USA Inc.
PBLS6022D,115
onsemi
SMUN5235DW1T3G
Diodes Incorporated
DDA114YU-7-F
Toshiba Semiconductor and Storage
RN2507(TE85L,F)
Rohm Semiconductor
IMB10AT110
Rohm Semiconductor
EMG2T2R
onsemi