NP100N055PUK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 55V 100A TO263
$3.27
Available to order
Reference Price (USD)
1+
$3.27000
500+
$3.2373
1000+
$3.2046
1500+
$3.1719
2000+
$3.1392
2500+
$3.1065
Exquisite packaging
Discount
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Boost your electronic applications with NP100N055PUK-E1-AY, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NP100N055PUK-E1-AY meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.25mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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