NP100P04PLG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 40V 100A TO263
$4.24
Available to order
Reference Price (USD)
1+
$4.24000
500+
$4.1976
1000+
$4.1552
1500+
$4.1128
2000+
$4.0704
2500+
$4.028
Exquisite packaging
Discount
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Experience the power of NP100P04PLG-E1-AY, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NP100P04PLG-E1-AY is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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