NP23N06YDG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 60V 23A 8HSON
$0.61
Available to order
Reference Price (USD)
1+
$0.60621
500+
$0.6001479
1000+
$0.5940858
1500+
$0.5880237
2000+
$0.5819616
2500+
$0.5758995
Exquisite packaging
Discount
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Renesas Electronics America Inc presents NP23N06YDG-E1-AY, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NP23N06YDG-E1-AY delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 60W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
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