NP33N06YDG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 60V 33A 8HSON
$0.87
Available to order
Reference Price (USD)
1+
$0.87341
500+
$0.8646759
1000+
$0.8559418
1500+
$0.8472077
2000+
$0.8384736
2500+
$0.8297395
Exquisite packaging
Discount
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Boost your electronic applications with NP33N06YDG-E1-AY, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NP33N06YDG-E1-AY meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 97W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
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