NP36P04SDG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 40V 36A TO252
$1.48
Available to order
Reference Price (USD)
1+
$1.48000
500+
$1.4652
1000+
$1.4504
1500+
$1.4356
2000+
$1.4208
2500+
$1.406
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with NP36P04SDG-E1-AY, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NP36P04SDG-E1-AY meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Toshiba Semiconductor and Storage
TK100L60W,VQ
STMicroelectronics
STP2N62K3
Infineon Technologies
IPI80N04S303AKSA1
NXP Semiconductors
PSMN8R5-100ESFQ
Renesas Electronics America Inc
2SK3054-T1-A
Diodes Incorporated
DMN3730UFB4-7
Vishay Siliconix
SI2305CDS-T1-GE3
Rectron USA
RM80N150T2
Infineon Technologies
IRF8736TRPBF
Vishay Siliconix