NSBA123TDP6T5G
onsemi
onsemi
TRANS PREBIAS 2PNP 50V SOT963
$0.05
Available to order
Reference Price (USD)
8,000+
$0.10305
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with onsemi's NSBA123TDP6T5G Pre-Biased BJT Arrays the perfect solution for space-constrained applications. These discrete semiconductor products deliver optimized performance with built-in bias resistors, simplifying your PCB layout while ensuring stable operation. Key features include high current gain, low leakage current, and excellent temperature characteristics. Widely used in LED drivers, interface circuits, and logic level conversion across telecom, automation, and IoT devices. Trust onsemi's expertise in transistor technology for your next project. Ready to order or need technical support? Send us your inquiry today!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 408mW
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
Related Products
onsemi
NSBC144WDXV6T1G
Toshiba Semiconductor and Storage
RN4903,LXHF(CT
onsemi
NSBA123JDXV6T5G
Nexperia USA Inc.
NHUMH13X
Toshiba Semiconductor and Storage
RN4911,LXHF(CT
Diodes Incorporated
UMC4N-7
onsemi
MUN5232DW1T1G
Nexperia USA Inc.
PBLS6022D,115
onsemi
SMUN5235DW1T3G
Diodes Incorporated