NSBC114EPDP6T5G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT963
$0.40
Available to order
Reference Price (USD)
8,000+
$0.06110
16,000+
$0.05231
24,000+
$0.04938
56,000+
$0.04645
200,000+
$0.04157
Exquisite packaging
Discount
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Experience precision engineering with onsemi's NSBC114EPDP6T5G Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. onsemi provides comprehensive technical resources for NSBC114EPDP6T5G integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 339mW
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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