NSBC114TDXV6T5
onsemi
onsemi
TRANS 2NPN PREBIAS 0.5W SOT563
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Select onsemi's NSBC114TDXV6T5 for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, onsemi offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your NSBC114TDXV6T5 inquiry our team awaits your requirements!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Toshiba Semiconductor and Storage
RN1965(TE85L,F)
onsemi
NSBC114TPDXV6T1G
Panasonic Electronic Components
UP0431600L
Toshiba Semiconductor and Storage
RN2710,LF
onsemi
SMUN5313DW1T1G
Nexperia USA Inc.
NHUMD2X
Infineon Technologies
BCR185SH6327XTSA1
Nexperia USA Inc.
PIMH9,115
Toshiba Semiconductor and Storage
RN2902FE,LXHF(CT
Panasonic Electronic Components